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Journal description
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Details for article 58 of 60 found articles
| Title: |
Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source–Drain FinFETs |
| Author: |
Rezali, F. A. Md Rasid, M. A. S. Abd Othman, N. A. F. Hatta, S. Wan Muhamad Soin, N. |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 46 (2016) nr. 3 pages 1567-1575 |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 58 of 60 found articles
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