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Details for article 41 of 45 found articles
| Title: |
Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD) |
| Author: |
Subramanian, Baskaran Anandan, Mohanbabu Veerappan, Saminathan Panneerselvam, Murugapandiyan Wasim, Mohammed Radhakrishnan, Saravana Kumar Pechimuthu, Praveen Verma, Yogesh Kumar Vivekanandhan, Subash Navaneethan Raju, Elamurugan |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 49 () nr. 7 pages 4091-4099 |
| Year: |
2020-04-13 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 41 of 45 found articles
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