|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 20 of 70 found articles
| Title: |
Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes |
| Author: |
Chen, Jun Yi, Wei Kumar, Ashutosh Iwanade, Akio Tanaka, Ryo Takashima, Shinya Edo, Masaharu Ito, Shun Kimura, Takashi Ohkubo, Tadakatsu Sekiguchi, Takashi |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 49 () nr. 9 pages 5196-5204 |
| Year: |
2020-03-26 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 20 of 70 found articles
| << previous | next >> |